document number: 81852 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.6, 26-oct-10 1 bidirectional symmetrical (bisy) single line esd-protection diode in llp1006-2l VCUT0505B-HD1 vishay semiconductors marking (example only) bar = pin 1marking x = date code y = type code (see table below) features ? ultra compact llp1006-2l package ? low package profile < 0.4 mm ? 1-line esd-protection ? working range 5 v ? low leakage current i r < 0.1 a ? low load capacitance c d = 18 pf ? esd-protection acc. iec 61000-4-2 20 kv contact discharge 25 kv air discharge ? soldering can be checked by standard vision inspection; no x-ray necessary ? pin plating nipdau (e4) no whisker growth ? e4 - precious metal (e.g. ag, au, nipd, nipdau) (no sn) ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec 20 8 55 21129 1 2 21121 xy ordering information device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity VCUT0505B-HD1 VCUT0505B-HD1-gs08 8000 8000 package data device name package name type code weight molding compound flammability rating moisture sensitivity level soldering conditions VCUT0505B-HD1 llp1006-2l l 0.72 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals absolute maximum ratings parameter test conditions symbol value unit peak pulse current acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 3.5 a peak pulse power pin 1 to pin 2 acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 56 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 20 kv air discharge acc. iec 61000-4-2; 10 pulses 25 kv operating temperatur e junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test conditions/remarks symbol min. typ. max. unit protection paths number of lines which can be protected n lines - - 1 lines reverse working voltage at i r = 0.1 a v rwm 5- -v reverse current at v r = 5 v i r --0.1a reverse breakdown voltage at i r = 1 ma v br 7- -v reverse clamping voltage at i pp = 1 a v c --12v at i pp = i ppm = 3.5 a v c --16v capacitance at v r = 0 v; f = 1 mhz c d -1820v at v r = 2.5 v; f = 1 mhz c d -14.5- pf ** please see document ?vishay material category policy?: www.vishay.com/doc?99902
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 81852 2 rev. 1.6, 26-oct-10 VCUT0505B-HD1 vishay semiconductors bidirectional symmetri cal (bisy) single line esd-protection di ode in llp1006-2l cut the spikes with VCUT0505B-HD1: the VCUT0505B-HD1 is a bi directional and sy mmetrical ( bisy ) esd-protection device which clamps positive and negative overvoltage transients to ground. connected between the signal or data line and the ground the VCUT0505B-HD1 offers a high isolation (low leakage current, low capacitance) within the sp ecified working range. due to the short leads and small package size of the tiny llp1006-2l package the line inductance is very low, so that fast tr ansients like an esd-strike can be clamped with minimal over- or undershoots. typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - esd discharge current wave form acc. iec 61000-4-2 (330 /150 pf) fig. 2 - 8/20 s peak pulse current wave form acc. iec 61000-4-5 fig. 3 - typical capacitance c d vs. reverse voltage v r fig. 4 - typical reverse voltage v r vs. reverse current i r 0 % 20 % 40 % 60 % 8 0 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 8 0 90 100 time (ns) discharge c u rrent i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 0 % 20 % 40 % 60 % 8 0 % 100 % 010203040 time ( s) i ppm 20 s to 50 % 8 s to 100 % 2054 8 0 2 4 6 8 10 12 14 16 1 8 20 0123456 v r ( v ) c d (pf) 21122 f = 1 mhz - 10 - 8 - 6 - 4 - 2 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 10 000 i r ( a) v r ( v ) 21123 pin 1 to 2
document number: 81852 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.6, 26-oct-10 3 VCUT0505B-HD1 bidirectional symmetri cal (bisy) single line esd-protection diode in llp1006-2l vishay semiconductors fig. 5 - typical reverse voltage v r vs. reverse current i r fig. 6 - typical peak clamping voltage v c vs. peak pulse current i pp fig. 7 - typical clamping performance at + 8 kv contact discharge (acc. iec 61000-4-2) fig. 8 - typical clamping performance at - 8 kv contact discharge (acc. iec 61000-4-2) fig. 9 - typical peak. clamping voltage at esd contact discharge (acc. iec 61000-4-2) - 10 - 8 - 6 - 4 - 2 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 10 000 i r ( a) v r ( v ) 21124 pin 2 to 1 - 15 - 10 - 5 0 5 10 15 20 01234 i pp (a) v c ( v ) 21125 v c positi v e s u rge n egati v e s u rge meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) pin 2 to 1 - 20 - 10 0 10 20 30 40 50 60 70 8 0 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 + 8 k v contact discharge t (ns) v c-esd ( v ) 21126 pin 2 to 1 - 8 0 - 60 - 40 - 20 0 20 40 -100 10 203040506070 8 090 acc. iec 61000-4-2 - 8 k v contact discharge t (ns) v c-esd ( v ) 21127 pin 2 to 1 - 200 - 150 - 100 - 50 0 50 100 150 200 0 5 10 15 20 25 v esd (k v ) v c-esd ( v ) 2112 8 acc. iec 61000-4-2 contact discharge v c-esd positi v e discharge n egati v e discharge pin 2 to 1
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 81852 4 rev. 1.6, 26-oct-10 VCUT0505B-HD1 vishay semiconductors bidirectional symmetri cal (bisy) single line esd-protection di ode in llp1006-2l package dimensions in millimeters (inches): llp1006-2l 20 8 12 doc u ment no.:s 8 - v -3906.04-005 (4) 0.55 (0.022) 0.45 (0.01 8 ) 0.25 (0.010) 0.15 (0.006) 0.45 (0.01 8 ) 0.35 (0.014) 0.3 (0.012) 0.2 (0.00 8 ) 0.4 (0.016) 0.33 (0.013) 1.05 (0.041) 0.95 (0.037) 0.05 (0.002) 0 (0.000) 0.125 (0.005) ref. 0.65 (0.026) 0.55 (0.022) 0.05 (0.002) 0.25 (0.010) 0.5 (0.020) 1 (0.039) 0.5 [0.020] 0.6 (0.024) 0.2 (0.00 8 ) re v . 4 - date: 12. sept. 200 8 created - date: 13. j u ly. 2007 orientation identification foot print recommendation: solder resist mask solder pad soldermask opening 0.03 meas u red middle of the package
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